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TGA2509
Wideband 1W HPA with AGC
Key Features
* * * * * * * * * Frequency Range: 2-22 GHz 30 dBm Nominal Psat (2-16 GHz) >29 dBm Nominal Psat (2-20 GHz) >28.5 dBm Output P1dB 17 dB Nominal Gain > 25 dB AGC Range 0.25 um 3MI pHEMT Technology Nominal Bias 12 V @ 1.1 A Chip Dimensions: 2.30 x 3.20 x 0.10 mm (0.091 x 0.126 x 0.004 in)
Primary Applications * Wideband Gain Block * Military EW and ECM * Test Equipment
Product Description
The TriQuint TGA2509 is a compact Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuint's proven standard 0.25 um gate pHEMT production process. The TGA2509 provides >28.5 dBm of output power at 1 dB gain compression with small signal gain of 17 dB. Typical saturated power is 30 dBm from 2-16 GHz. The TGA2509 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,decoys, jammers and phased array systems. The TGA2509 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant
Measured Fixtured Data Bias Conditions: Vd =12 V, Id= 1.1 A
Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 1
TGA2509
TABLE I MAXIMUM RATINGS 1/ SYMBOL V
+
PARAMETER Positive Supply Voltage Gate 1 Supply Voltage Range Gate 2 Supply Voltage Range AGC Control Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation (without using AGC) Power Dissipation (when Vc < +2V) Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE 12.5 V -2V TO 0 V -2V TO 0 V Vc < +5 V V -Vc < 14V
+
NOTES 2/
Vg1 Vg2 Vc I+ | IG | PIN PD PD TCH TSTG 1/ 2/ 3/ 4/
1.4 A 70 mA 30 dBm 17.5 W 15.7 W 200 C 320 C -65 to 150 C
2/ 2/ 2/, 3/ 2/, 3/ 4/, 5/
These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 8.2E4 hours (without AGC) or 2.3E4 hours (with AGC). Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
5/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
2
TGA2509
TABLE II RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) Vd = 12 V, Id = 1.1 A SYMBOL Gain IRL ORL Psat PARAMETER Small Signal Gain Input Return Loss Output Return Loss Saturated Power Output Power @ 1dB Gain Compression TEST CONDITION f = 2-22 GHz f = 2-22 GHz f = 2-22 GHz f = 2-16 GHz f = 2-20 GHz f = 2-20 GHz NOMINAL 17 12 12 30 29 28.5 dBm UNITS dB dB dB dB
P1dB
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
3
TGA2509
TABLE III THERMAL INFORMATION PARAMETER JC Thermal Resistance (channel to backside of carrier) JC Thermal Resistance (channel to backside of carrier) TEST CONDITIONS Vd = 12 V ID = 1.1 A Pdiss = 13.2 W (without using AGC) Vd = 12 V ID = 0.88 A Pdiss = 10.6 W (when using AGC) TCH o ( C) 155 JC (C/W) 6.4 Tm (HRS) 6.7E+5
158
8.3
5.2E+5
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 15 W with 1 W RF power delivered to load. Power dissipated is 14 W and the temperature rise in the channel is 90 C.
Median Lifetime (Tm) vs. Channel Temperature
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
4
TGA2509
Measured Fixtured Data Bias Conditions: Vd =12 V, Id= 1.1 A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
5
TGA2509
Mechanical Characteristics
0.289 (0.011)
3.200 (0.126) 3.105 (0.122)
2
0.333 (0.013) 0.095 (0.004) 0.000 (0.000)
3 1 6 0.363 (0.014) pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 (RF In) (Vg1) (RF Out) (Vd) (Vg2) (VC) 5 1.150 (0.045) 4 1.790 (0.070) 2.300 (0.091) 2.205 (0.087)
0.482 (0.019)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
0.095 (0.004) 0.000 (0.000) Bond Bond Bond Bond Bond Bond
Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC 0.100 x 0.150 (0.004 x 0.006) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.150 (0.004 x 0.006) 0.250 x 0.100 (0.010 x 0.004) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004)
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TGA2509
Recommended Assembly Diagram
Bias Procedures:
Vc bias connection is optional, but the 100pF cap always needs to be connected. For biasing without AGC control: 1. Apply -1.2V to Vg1, and -1.2V to Vg2. 2. Apply +12V to Vd. 4. Adjust Vg1 to attain 580 mA drain current (Id) 4. Adjust Vg2 to attain 1080 mA total drain current (Id). For biasing with AGC control: 1. Apply -1.2V to Vg1 and -1.2V to Vg2 2. Apply +12V to Vd 3. Apply +2.6V to Vc 4. Adjust Vg1 to attain 580 mA drain current (Id) 5. Adjust Vg2 to attain 1080 mA total drain current (Id). 6. Adjust Vc as needed to control gain level.
Vg1
1 uF
100pF
RF IN
100pF 100pF 100pF 1 uF 1 uF
RF OUT
Vc
Vg2
Vd
To ensure low frequency stability, use 1uF surface mount (not leaded) capacitors (on the Vd, Vg1, and Vg2 nodes) that are located close to the MMIC. Contact TriQuint Semiconductor Applications Engineering for more details.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
7
TGA2509
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
8

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